Mosfet

IRF840 500V 8A N-Channel MOSFET – High-Speed Switching Power Transistor

Specification:-
  1. N-Channel Power MOSFET
  2. Continuous drain current : 8A
  3. Gate threshold voltage : 10V (limit = ±20V)
  4. Drain to source breakdown voltage: 500V
  5. Drain source resistance : 0.85 Ohms
  6. Rise time and fall time : 23nS and 20nS

SKU: -IRF840-50-4492

MRP RS.78.55
Rs.49.00 (Include Tax)
Quantity

Perfectly Done

IRF840 500V 8A N-Channel MOSFET – High-Speed Switching Power Transistor

The IRF840 is a high-voltage, high-current N-channel enhancement mode Power MOSFET capable of switching loads up to 500V and 8A. Built with advanced silicon gate technology, it supports operation in avalanche breakdown mode, ensuring reliable performance in high-stress switching conditions. With a gate threshold voltage of 10V, it requires a gate driver circuit for operation in digital systems.Due to its fast switching speed, low thermal resistance, and low cost, the IRF840 is widely used in inverters, DC-DC converters, motor drivers, and relay control circuits. However, with an RDS(on) of ~0.85Ω, it's better suited for applications where ultra-high efficiency is not the primary requirement.

Applications:-
  • Switching high power devices
  • Inverter circuits
  • DC-DC converters
  • Control speed of motors
  • LED dimmers or flashers
  • High-speed switching applications

Technical Specifications

Product Details
Specification:-
  1. N-Channel Power MOSFET
  2. Continuous drain current : 8A
  3. Gate threshold voltage : 10V (limit = ±20V)
  4. Drain to source breakdown voltage: 500V
  5. Drain source resistance : 0.85 Ohms
  6. Rise time and fall time : 23nS and 20nS

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